sot-89-3l 1. base 2. collector 3. emitter transistor(pnp) features z switching and linear amplification z high current and low voltage z complement to pxt2222a marking:p2f maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-1ma,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.01 a emitter cut-off current i ebo v eb =-5v,i c =0 -0.01 a v ce =-10v, i c =-0.1ma 75 v ce =-10v, i c =-1ma 100 v ce =-10v, i c =-10ma 100 v ce =-10v, i c =-150ma 100 300 dc current gain h fe v ce =-10v, i c =-500ma 50 i c =-500ma,i b =-50ma -1.6 v collector-emitter saturation voltage v ce(sat) i c =-150ma,i b =-15ma -0.4 v i c =-500ma,i b =-50ma -2.6 v base-emitter saturation voltage v be(sat) i c =-150ma,i b =-15ma -1.3 v delay time t d 12 ns rise time t r 30 ns storage time t s 300 ns fall time t f v cc =-30v, i c =-150ma, i b1 =- i b2 =-15ma 65 ns transition frequency f t v ce =-10v,i c =-20ma, f=100mhz 200 mhz symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -600 ma p c collector power dissipation 500 mw r ja thermal resistance from junction to ambient 250 / w t j junction temperature 150 t stg storage temperature -55~+150 PXT2907A 1 date:2011/05 www.htsemi.com semiconductor jinyu
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